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K4T1G044/K4T1G084/K4T1G164 1Gb DDR2


The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x
8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks
device. This synchronous device achieves high speed doubledata-
rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for
general applications.
The chip is designed to comply with the following key DDR2
SDRAM features such as posted CAS with additive latency, write
latency = read latency - 1, Off-Chip Driver(OCD) impedance
adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair
of externally supplied differential clocks. Inputs are latched at the
crosspoint of differential clocks (CK rising and CK falling). All I/Os
are synchronized with a pair of bidirectional strobes (DQS and
DQS) in a source synchronous fashion. The address bus is used
to convey row, column, and bank address information in a RAS/
CAS multiplexing style. For example, 1Gb(x8) device receive 14/
10/3 addressing.
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power
supply and 1.8V ± 0.1V VDDQ.
The 1Gb DDR2 device is available in 60ball FBGAs(x4/x8) and in
84ball FBGAs(x16).

K4T1G084QQ.pdf
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