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双通道功率型N沟道MOSFET FDS6990AS-30V


介绍

The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low RDS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.

特性

■7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON)= 28 mΩ @ VGS = 4.5 V
■Includes SyncFET Schottky diode 
■Low gate charge (10nC typical)
■High performance trench technology for extremely low
RDS(ON)
■High power and current handling capability
 

产厂商:Fairchild Semiconductor

datasheet:
SPEC_FDS6990AS.pdf
下载: pdf 文件

 

 


 
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