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NAND KFG2816Q1M/KFG2816U1M-128Mb

本文章共1711字,分2页,当前第1页,快速翻页:
 

介绍

 OneNAND is a single-die chip with standard NOR Flash interface using NAND Flash Array.  This device is comprised of logic and
NAND Flash Array and 3KB internal BufferRAM.  1KB BootRAM is used for reserving bootcode, and 2KB DataRAM is used for buff-
ering data. The operating clock frequency is up to 54MHz. This device is X16 interface with Host, and has the speed of ~76ns random
access time. Actually, it is accessible with minimum 4clock latency(host-driven clock for synchronous read), but this device adopts the
appropriate wait cycles by programmable read latency. OneNAND provides the multiple sector read operation by assigning the num-
ber of sectors to be read in the sector counter register.  The device includes one block sized OTP(One Time Programmable), which
can be used to increase system security or to provide identification capabilities.    

特性

 Design Technology: 0.12µm
• Voltage Supply
  - 1.8V device(KFG2816Q1M) : 1.7V~1.95V
  - 3.3V device(KFG2816U1M) : 2.7V~3.6V
• Organization
  - Host Interface:16bit
• Internal BufferRAM(3K Bytes)
  - 1KB for BootRAM, 2KB for DataRAM
• NAND Array
  - Page Size : (1K+32)bytes
  - Block Size : (64K+2K)bytes
♦ Architecture
• Host Interface type
  - Synchronous Burst Read
    : Clock Frequency: up to 54MHz
    : Linear Burst - 4 , 8 , 16 , 32 words with wrap-around
    : Continuous Sequential Burst(512 words)
  - Asynchronous Random Read
    : Access time of 76ns
  - Asynchronous Random Write
• Programmable Read latency
• Multiple Sector Read
  - Read multiple sectors by Sector Count Register(up to 2 sectors)
• Multiple Reset
  - Cold Reset / Warm Reset / Hot Reset / NAND Flash Reset
• Power dissipation (typical values, CL=30pF)
 - Standby current : 10uA@1.8V device, 15uA@3.3V device
 - Synchronous Burst Read current(54MHz) : 12mA@1.8V device, 20mA@3.3V device
 - Load current : 20mA@1.8V device, 20mA@3.3V device
 - Program current: 20mA@1.8V device, 20mA@3.3V device
 - Erase current: 15mA@1.8V device, 18mA@3.3V device
• Reliable CMOS Floating-Gate Technology
 - Endurance : 100K Program/Erase Cycles
 - Data Retention : 10 Years
♦ Performance
• Voltage detector generating internal reset signal from Vcc
• Hardware reset input (RP)
• Data Protection
  - Write Protection mode for BootRAM
  - Write Protection mode for NAND Flash Array
  - Write protection during power-up
  - Write protection during power-down
• User-controlled One Time Programmable(OTP) area
• Internal 2bit EDC / 1bit ECC
• Internal Bootloader supports Booting Solution in system
♦ Hardware Features
• Handshaking Feature
  - INT pin: Indicates Ready / Busy of OneNAND
  - Polling method: Provides a software method of detecting the Ready / Busy status of OneNAND
 

 
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