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eMMC+LPDDR2 H9TP32A4GDMCPR-4GB+4Gb\1.8V\2.8V+1.8V

发布时间:2012-01-14  -  点击:2398次  -  字数:1284字
介绍 4GB eMMC + 4Gb LP DDR2 特性 [ e-NAND Flash ] ● Packaged NAND flash memory with MultiMediaCard interface ● High capacity memory access ● eMMC/MultiMediaCard system specification, compliant with V4.41 ● Full backward compatibility...

eMMC+LPDDR H9DP32A4JJMCGR-4GB+4Gb\1.8V\2.8V+1.8V

发布时间:2012-01-14  -  点击:1037次  -  字数:894字
介绍 4GB eMMC + 4Gb LP DDR 特性 [ e-NAND Flash ] ● Packaged NAND flash memory with MultiMediaCard interface ● High capacity memory access ● eMMC/MultiMediaCard system specification, compliant with V4.41 ● Full...

NAND KFH4G16Q2A-4Gb

发布时间:2011-08-16  -  点击:194次  -  字数:4913字
介绍 The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash...

NAND KFH2G16Q2A-2Gb

发布时间:2011-08-16  -  点击:225次  -  字数:4913字
介绍 The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash...

NAND KFG2816Q1M/KFG2816U1M-128Mb

发布时间:2011-08-13  -  点击:60次  -  字数:1711字
介绍 OneNAND is a single-die chip with standard NOR Flash interface using NAND Flash Array. This device is comprised of logic and NAND Flash Array and 3KB internal BufferRAM. 1KB BootRAM is used for reserving bootcode, and 2KB DataRAM is...

NAND KFG1216Q2A-512Mb

发布时间:2011-08-13  -  点击:118次  -  字数:7913字
介绍 The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash...

NAND KFG5616Q1A/KFG5616U1A-256Mb

发布时间:2011-08-13  -  点击:70次  -  字数:8592字
介绍 The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash...

NAND KFG1G16Q2A-1Gb

发布时间:2011-08-13  -  点击:166次  -  字数:5051字
介绍 The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash...

NAND K9F5608R0D/K9F5608U0D/K9F5608B0D-256Mb/small_block

发布时间:2011-08-13  -  点击:106次  -  字数:1568字
介绍 Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program...

NAND K9F1208R0B/K9F1208B0B/K9F1208U0B-512Mb/small_block

发布时间:2011-08-13  -  点击:80次  -  字数:1630字
介绍 Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market...

NAND K9K1G08R0B/K9K1G08B0B/K9K1G08U0B-1Gb/small_block

发布时间:2011-08-13  -  点击:70次  -  字数:1433字
介绍 The K9K1G08X0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in...

NAND K9WAG08U1A/K9WAG08U1M-16Gb/large_block

发布时间:2011-08-13  -  点击:70次  -  字数:1496字
介绍 Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation can be performed in typical...

NAND K9NBG08U5A/K9NBG08U5M-32Gb/large_block

发布时间:2011-08-13  -  点击:93次  -  字数:1472字
介绍 Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation can be performed in typical...

NAND K9W8G08U1M-8Gb/large_block

发布时间:2011-08-13  -  点击:99次  -  字数:1547字
介绍 Offered in 512Mx8bit, the K9K4G08U0M is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effective solu- tion for the solid state mass storage market. A program operation can be performed in typical 200 s on...

NAND K9K8G08U1M/K9K8G08U1A/K9K8G08U0A-8Gb/large_block

发布时间:2011-08-13  -  点击:41次  -  字数:1366字
介绍 Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation can be performed in typical...



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