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双路功率P沟道MOSFET FDMA1023PZ(-20V\–3.7A\72mΩ)


介绍

This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two independent
P-Channel MOSFETs with  low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.

特性

„ Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A
„ Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A
„ Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A
„ Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ HBM ESD protection level > 2kV typical (Note 3)
„ RoHS Compliant

产厂商:Fairchild Semiconductor

datasheet:
FDMA1023PZ.pdf
下载: pdf 文件

 


 
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