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双通道功率型P沟道MOSFET FDS4935BZ-30V


介绍

This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

特性

• –6.9 A, –30 V. RDS(ON) = 22 m: @ VGS = –10 V
  RDS(ON) = 35 m: @ VGS = – 4.5 V
• Extended VGSS range (–25V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability

产厂商:Fairchild Semiconductor

datasheet:
SPEC_FDS4935BZ.pdf
下载: pdf 文件

 


 
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