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双路功率P沟道MOSFET NTLJD3115P(−20V\−4.1A)

发布时间:2011-05-19  -  点击:201次  -  字数:311字
介绍 Power MOSFET 20 V, 4.1 A, Cool Dual P Channel, 2x2 mm WDFN Package 特性 WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 2x2 mm Footprint Same as SC 88 Lowest RDS(on) Solution in 2x2 mm Package 1.8 V RDS...

双路功率P沟道MOSFET FDMA1023PZ(-20V\–3.7A\72mΩ)

发布时间:2011-05-19  -  点击:103次  -  字数:532字
介绍 This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state...

马达驱动MOSFET NUD3105

发布时间:2011-05-19  -  点击:77次  -  字数:493字
介绍 This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD...

双通道功率型P沟道MOSFET FDS4935BZ-30V

发布时间:2011-05-19  -  点击:125次  -  字数:468字
介绍 This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature...

双通道功率型N沟道MOSFET FDS6990AS-30V

发布时间:2011-05-19  -  点击:549次  -  字数:473字
介绍 The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power sup- plies. This 30V MOSFET is designed to maximize power con- version efficiency, providing a low RDS(ON) and low gate...

低阀值N沟道MOSFET NTJS3157N-20V\4.0A

发布时间:2011-05-19  -  点击:117次  -  字数:225字
介绍 Trench Power MOSFET 20 V, 4.0 A, Single N Channel, SC 88 特性 Leading Trench Technology for Low RDS(ON) Extending Battery Life Fast Switching for Increased Circuit Efficiency SC 88 Small Outline (2 x 2 mm) for Maximum Circuit Board...

N沟道功率型MOSFET WNM2306-30V\2.8A

发布时间:2011-05-19  -  点击:115次  -  字数:307字
介绍 The WNM2306 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WNM2306 is Pb-free. 特性 V(BR)DSS RDS...

N沟道MOSFET NTJS3157N-20V\4.0A

发布时间:2011-05-19  -  点击:44次  -  字数:227字
介绍 Trench Power MOSFET 20 V, 4.0 A, Single N Channel, SC 88 特性 Leading Trench Technology for Low RDS(ON) Extending Battery Life Fast Switching for Increased Circuit Efficiency SC 88 Small Outline (2 x 2 mm) for Maximum Circuit Board...

N沟道MOS场效应管SSM3K35MFV(-20V\-180mA\20Ω)

发布时间:2011-05-18  -  点击:42次  -  字数:192字
介绍 ○ High-Speed Switching Applications ○ Analog Switch Applications 特性 1.2 V drive Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V...

双通道P沟道MOS管WPMD2010(-20V\-3.1A)

发布时间:2011-05-18  -  点击:331次  -  字数:315字
介绍 The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free. 特性 V(BR)DSS RDS(on)...

肖特基二极管P沟道MOS管FDFMA2P853

发布时间:2011-05-18  -  点击:66次  -  字数:594字
介绍 This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and...

P沟道增强型MOS管WPM2341

发布时间:2011-05-18  -  点击:578次  -  字数:138字
特性 Higher Efficiency Extending Battery Life Miniature SOT23-3 Surface Mount Package Super high density cell design for extremely low RDS (ON) 生产厂商:Will Semiconductor datasheet: WPM2341-v1.5(new).pdf 下载: pdf 文件

肖特基二极管功率P沟道MOS管WPM2006

发布时间:2011-05-18  -  点击:52次  -  字数:124字
特性 Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky 生产厂商:Will Semiconductor datasheet: WPM2006_V1.2.pdf 下载: pdf 文件

P沟道MOS管Si2333DS-12V

发布时间:2011-05-18  -  点击:92次  -  字数:309字
特性 TrenchFET Power MOSFET product summary VDS (V) rDS(on) (Ω) ID (A) -12 0.032 @ VGS = 4.5 V -5.3 0.042 @ VGS = 2.5 V - 4.6 0.059 @ VGS = 1.8 V - 3.9 生产厂商:VISHAY datasheet: SI2333DS.pdf 下载: pdf 文件

P沟道MOS管Si2305DS-1.25W\1.8V

发布时间:2011-05-18  -  点击:96次  -  字数:336字
特性 product summary VDS (V) rDS(on) () ID (A) -8 0.052 @ VGS = 4.5 V +-3.5 0.071 @ VGS = 2.5 V +-3 0.108 @ VGS = 1.8 V +-2 生产厂商:VISHAY datasheet: Si2305DS(PMOS).pdf 下载: pdf 文件



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