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K9GAG08 2Gx8Bit/4Gx8Bit/8Gx8Bit NAND


FEATURES
• Voltage Supply
- 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V
- 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (2G + 109M) x 8bit
- Data Register : (4K + 218) x 8bit
• Automatic Program and Erase
- Page Program : (4K + 218)Byte
- Block Erase : (512K + 27.25K)Byte
• Page Read Operation
- Page Size : (4K + 218)Byte
- Random Read : 60μs(Max.)
- Serial Access : 30ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time
- Program time : 800μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : TBD Cycles(with TBD ECC)
- Data Retention : TBD Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
- K9GAG08U0D-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9GAG08U0D-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9LBG08U1D-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9LBG08U1D-LCB0/LIB0 : Pb/Halogen-FREE PACKAGE
52 - Pin ULGA (14 x 18 / 1.00 mm pitch)
- K9HCG08U5D-LCB0/LIB0 : Pb/Halogen-FREE PACKAGE
52 - Pin WLGA (14 x 18 / 1.00 mm pitch)

K9GAG08U0D.pdf
下载: pdf 文件


公司信息:http://www.bbfar.com/article/11/2003.html


 
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