您的位置:笔笔发 物料系统 存储器 正文
内容搜索
笔笔发:技术产业信息平台----成就有识之士创业梦想的殿堂
热门内容
推荐内容
NAND K9F1208R0B/K9F1208B0B/K9F1208U0B-512Mb/small_block

本文章共1630字,分2页,当前第1页,快速翻页:
 

介绍

 Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.  The device is offered in 1.8V, 2.7V,  3.3V Vcc.  Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market.  A program operation can be performed
in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns(K9F1208R0B : 60ns) cycle time per byte.  The I/O pins serve as the ports for address and data input/output
as well as command input.   The on-chip write control automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B′s
extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable appli-
cations requiring non-volatility.        

特性

• Voltage Supply 
    - 1.8V device(K9F1208R0B) : 1.65~1.95V
    - 2.7V device(K9F1208B0B) : 2.5~2.9V
    - 3.3V device(K9F1208U0B) :  2.7 ~ 3.6 V
• Organization
  - Memory Cell Array : (64M + 2048K)bit x 8 bit
  - Data Register : (512 + 16)bit x 8bit
• Automatic Program and Erase
  - Page Program : (512 + 16)Byte
  - Block Erase : (16K + 512)Byte
• Page Read Operation
  - Page Size : (512 + 16)Byte
  - Random Access      : 15µs(Max.)
  - Serial Page Access : 50ns(Min.)
(*K9F1208R0B : tRC = 60ns(Min.))

• Fast Write Cycle Time
  - Program time : 200µs(Typ.)
  - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
  - Endurance        : 100K Program/Erase Cycles
  - Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
  - K9F1208X0B-YCB0/YIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
  - K9F1208X0B-GCB0/GIB0
    63- Ball FBGA (8.5 x 13 , 1.0 mm width)
  - K9F1208U0B-VCB0/VIB0
    48 - Pin WSOP I (12X17X0.7mm)
  - K9F1208X0B-PCB0/PIB0
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
  - K9F1208X0B-JCB0/JIB0
    63- Ball FBGA - Pb-free Package
  - K9F1208U0B-FCB0/FIB0
    48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
      * K9F1208U0B-V,F(WSOPI )  is the same  device as 
 

 
点这里复制本页地址发送给您QQ/MSN上的好友

相关文章

NAND K9F5608R0D/K9F5608U0D/K9F5608B0D-25
NAND K9K1G08R0B/K9K1G08B0B/K9K1G08U0B-1G
NAND K9NBG08U5A/K9NBG08U5M-32Gb/large_bl
NAND K9WAG08U1A/K9WAG08U1M-16Gb/large_bl
NAND K9W8G08U1M-8Gb/large_block
NAND K9K8G08U1M/K9K8G08U1A/K9K8G08U0A-8G
NAND K9K4G08U1M/K9F4G08U0M/K9K4G08U0M/K9
NAND K9F2G08R0A/K9F2G08U0A/K9F2G08U0M/K9
NAND K9F1G08R0A/K9F1G08U0A-1Gb/large_blo
NAND K9F1G08U0B-1Gb/large_block
NAND KFG1G16Q2A-1Gb
NAND KFG1216Q2A-512Mb
NAND KFG2816Q1M/KFG2816U1M-128Mb
NAND KFG5616Q1A/KFG5616U1A-256Mb
NAND KFH2G16Q2A-2Gb
NAND KFH4G16Q2A-4Gb
eMMC+LPDDR H9DP32A4JJMCGR-4GB+4Gb\1.8V\2
eMMC+LPDDR2 H9TP32A4GDMCPR-4GB+4Gb\1.8V\

相关评论


本文章所属分类:首页 物料系统 存储器


反馈意见和建议